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| inchange semiconductor isc product specification isc silicon npn power transistors 2SD673 description collector-emitter breakdown voltage- : v (br)ceo = 100v(min) high power dissipation- : p c = 60w(max)@t c =25 complement to type 2sb653 applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 7 a i cm collector current-peak 12 a i b b base current-continuous 2 a p c collector power dissipation @t c =25 60 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors 2SD673 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; r be = 100 v v (br)ebo emitter-base breakdown voltage i e = 5ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 3.0 v v be (on) base-emitter on voltage i c = 1a; v ce = 5v 1.5 v i cbo collector cutoff current v cb = 100v; i e = 0 1 ma h fe-1 dc current gain i c = 1a; v ce = 5v 60 200 h fe-2 dc current gain i c = 5a; v ce = 5v 20 ? h fe- 1 classifications b c 60-120 100-200 isc website www.iscsemi.cn |
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